2N3867U4
Microchip Technology
Microchip Technology
POWER BJT
$72.76
Available to order
Reference Price (USD)
1+
$72.76500
500+
$72.03735
1000+
$71.3097
1500+
$70.58205
2000+
$69.8544
2500+
$69.12675
Exquisite packaging
Discount
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Optimize your designs with 2N3867U4 by Microchip Technology, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, 2N3867U4 is the perfect fit. Contact us today to learn more and place your order with Microchip Technology.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U4