2N3811L
Microsemi Corporation
Microsemi Corporation
TRANS 2PNP 60V 0.05A TO-78
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Enhance your electronic systems with Microsemi Corporation's 2N3811L BJT Arrays, featuring advanced technology and robust performance. These arrays offer fast switching, high gain bandwidth, and excellent linearity, making them suitable for high-frequency and precision applications. Widely used in automotive electronics, industrial controls, and wearable devices. Ready to order? Request a quote or contact our support team for assistance!
Specifications
- Product Status: Obsolete
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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