2N3501U4/TR
Microchip Technology
Microchip Technology
SMALL-SIGNAL BJT
$130.11
Available to order
Reference Price (USD)
1+
$130.11000
500+
$128.8089
1000+
$127.5078
1500+
$126.2067
2000+
$124.9056
2500+
$123.6045
Exquisite packaging
Discount
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Optimize your designs with 2N3501U4/TR by Microchip Technology, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, 2N3501U4/TR is the perfect fit. Contact us today to learn more and place your order with Microchip Technology.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U4