2ED2110S06MXUMA1
Infineon Technologies
Infineon Technologies
LEVEL SHIFT SOI
$3.62
Available to order
Reference Price (USD)
1+
$3.62000
500+
$3.5838
1000+
$3.5476
1500+
$3.5114
2000+
$3.4752
2500+
$3.439
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The 2ED2110S06MXUMA1 Gate Drivers by Infineon Technologies set the standard for efficiency and reliability in power management. With features like fast response times, wide voltage ranges, and compact designs, these ICs are suited for applications in data centers, consumer electronics, and telecommunications. Trust Infineon Technologies to provide cutting-edge technology tailored to your needs. Reach out to us today for detailed specifications and pricing.
Specifications
- Product Status: Active
- Driven Configuration: High-Side and Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 6V, 14V
- Current - Peak Output (Source, Sink): 2.5A, 2.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 650 V
- Rise / Fall Time (Typ): 25ns, 17ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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