1SS307(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE GEN PURP 30V 100MA SMINI
$0.40
Available to order
Reference Price (USD)
3,000+
$0.10230
6,000+
$0.09610
15,000+
$0.08990
30,000+
$0.08680
Exquisite packaging
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Upgrade your electronic designs with Toshiba Semiconductor and Storage's 1SS307(TE85L,F) Single Rectifier Diodes, engineered for precision and durability. Perfect for rectification circuits, these diodes offer fast switching, high efficiency, and minimal power loss. Applications span across automotive systems, renewable energy solutions, and telecommunications. Key features include high temperature tolerance, low leakage current, and superior surge protection. Trust Toshiba Semiconductor and Storage for components that meet the highest industry standards. Ready to order? Submit your inquiry now!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 30 V
- Capacitance @ Vr, F: 6pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
- Operating Temperature - Junction: 125°C (Max)
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