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1N6483HE3/97

Vishay General Semiconductor - Diodes Division
1N6483HE3/97 Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO213AB
$0.13
Available to order
Reference Price (USD)
10,000+
$0.13272
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C

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