1N5809US
Microchip Technology
Microchip Technology
DIODE GEN PURP 100V 3A B-MELF
$8.20
Available to order
Reference Price (USD)
1+
$11.30000
10+
$10.17000
100+
$8.36200
500+
$7.00600
1,000+
$6.32800
Exquisite packaging
Discount
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Upgrade your electronic designs with Microchip Technology's 1N5809US Single Rectifier Diodes, engineered for precision and durability. Perfect for rectification circuits, these diodes offer fast switching, high efficiency, and minimal power loss. Applications span across automotive systems, renewable energy solutions, and telecommunications. Key features include high temperature tolerance, low leakage current, and superior surge protection. Trust Microchip Technology for components that meet the highest industry standards. Ready to order? Submit your inquiry now!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 60pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 175°C
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