1N5407GHB0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO201AD
$0.00
Available to order
Reference Price (USD)
5,000+
$0.08160
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with Taiwan Semiconductor Corporation's 1N5407GHB0G Single Rectifier Diodes, engineered for precision and durability. Perfect for rectification circuits, these diodes offer fast switching, high efficiency, and minimal power loss. Applications span across automotive systems, renewable energy solutions, and telecommunications. Key features include high temperature tolerance, low leakage current, and superior surge protection. Trust Taiwan Semiconductor Corporation for components that meet the highest industry standards. Ready to order? Submit your inquiry now!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Taiwan Semiconductor Corporation
HS1JL RUG
onsemi
SMBD1499LT1
Diodes Incorporated
B360CE-13
Vishay General Semiconductor - Diodes Division
SS16HE3_A/I
Vishay General Semiconductor - Diodes Division
1N5402-E3/51
Fairchild Semiconductor
MBRS340
Vishay General Semiconductor - Diodes Division
RGP10D-M3/73
Vishay General Semiconductor - Diodes Division
GP02-20-M3/54
Nexperia USA Inc.
BAT54-QVL
Taiwan Semiconductor Corporation