Shopping cart

Subtotal: $0.00

1N5407-T

Diodes Incorporated
1N5407-T Preview
Diodes Incorporated
DIODE GEN PURP 800V 3A DO201AD
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C

Related Products

Diodes Incorporated

BAR99TA

Taiwan Semiconductor Corporation

SFAF504GH

Taiwan Semiconductor Corporation

SFAF1604GHC0G

Taiwan Semiconductor Corporation

SS210LHMTG

Taiwan Semiconductor Corporation

SS16LHRHG

Taiwan Semiconductor Corporation

SF62GHB0G

Taiwan Semiconductor Corporation

SS210L M2G

Microchip Technology

JANTXV1N5195

Taiwan Semiconductor Corporation

RS3JHM6G

Top