1N5239B-TAP
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 9.1V 500MW DO35
$0.19
Available to order
Reference Price (USD)
10,000+
$0.02400
30,000+
$0.02160
50,000+
$0.01920
100,000+
$0.01800
250,000+
$0.01596
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Power your innovations with 1N5239B-TAP Zener Diodes by Vishay General Semiconductor - Diodes Division, designed for precision and durability. These diodes offer features such as excellent temperature stability, low reverse leakage, and high surge resistance, making them ideal for automotive electronics, solar inverters, and battery management systems. Count on us for high-performance solutions. Interested in custom specifications? Contact our team now for expert guidance and swift delivery!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 9.1 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 10 Ohms
- Current - Reverse Leakage @ Vr: 3 µA @ 7 V
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35 (DO-204AH)
Related Products
onsemi
MMSZ13T1G
Microchip Technology
JAN1N6321
onsemi
1N5355BRLG
Vishay General Semiconductor - Diodes Division
BZG05C5V6-M3-18
Panjit International Inc.
BZT52-B18-AU_R1_000A1
Vishay General Semiconductor - Diodes Division
PTV30B-M3/85A
Microchip Technology
JANTXV1N4478US
Nexperia USA Inc.
BZX884S-B12YL
Microchip Technology
JAN1N4583AUR-1
Diodes Incorporated