1N5230B-TR
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 500MW DO35
$0.25
Available to order
Reference Price (USD)
10,000+
$0.03281
30,000+
$0.03111
50,000+
$0.02941
100,000+
$0.02652
250,000+
$0.02601
Exquisite packaging
Discount
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The 1N5230B-TR Zener Diodes by Vishay General Semiconductor - Diodes Division set the benchmark for reliability and precision in voltage regulation. Featuring low dynamic impedance, high power handling, and superior thermal characteristics, these diodes are suited for aerospace, defense, and high-end computing applications. Trust our industry-leading quality for your critical projects. Need more details or ready to place an order? Send us your inquiry and we ll provide the best options for you!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 4.7 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 19 Ohms
- Current - Reverse Leakage @ Vr: 5 µA @ 2 V
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35 (DO-204AH)
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