1N5229B-TAP
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 500MW DO35
$0.25
Available to order
Reference Price (USD)
10,000+
$0.03281
30,000+
$0.03111
50,000+
$0.02941
100,000+
$0.02652
250,000+
$0.02601
Exquisite packaging
Discount
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Upgrade your circuits with the 1N5229B-TAP Zener Diodes by Vishay General Semiconductor - Diodes Division, perfect for maintaining voltage stability in demanding environments. These diodes feature sharp breakdown characteristics, low leakage current, and high power dissipation, suitable for voltage regulation, overvoltage protection, and waveform clipping. Trusted by engineers worldwide, our Zener Diodes deliver unmatched performance. Interested in bulk orders or custom solutions? Reach out now for expert support and competitive pricing!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 4.3 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 22 Ohms
- Current - Reverse Leakage @ Vr: 5 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35 (DO-204AH)
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