1N4150TAP
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 150MA DO35
$0.19
Available to order
Reference Price (USD)
10,000+
$0.02400
30,000+
$0.02160
50,000+
$0.01920
100,000+
$0.01800
250,000+
$0.01680
Exquisite packaging
Discount
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Revolutionize your power electronics with Vishay General Semiconductor - Diodes Division's 1N4150TAP Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Vishay General Semiconductor - Diodes Division provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 50 V
- Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35 (DO-204AH)
- Operating Temperature - Junction: -65°C ~ 175°C
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