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MT29F8G08ABABAWP-IT:B - Micron's 8Gb NAND Flash Memory IC | Obsolete but Reliable

MT29F8G08ABABAWP-IT:B: Micron's High-Performance 8Gb NAND Flash Memory IC

The MT29F8G08ABABAWP-IT:B from Micron Technology Inc. represents a significant milestone in NAND flash memory technology. Although now classified as obsolete, this 8Gb parallel interface flash memory IC continues to be essential for maintaining and upgrading legacy systems across various industries.

In-Depth Technical Specifications

Memory Architecture and Performance

This IC features a 1G x 8 organization with 8Gb total capacity, utilizing Micron's advanced NAND flash technology. The parallel interface offers:

  • Data transfer rates up to 40MB/s
  • 16-bit I/O bus width
  • Asynchronous operation mode
  • Page size of 2KB+64Bytes
  • Block size of 128KB+4KB

Robust Operating Characteristics

Engineered for reliability in demanding environments:

  • Wide voltage range: 2.7V to 3.6V
  • Extended temperature operation: -40 C to 85 C
  • 100,000 program/erase cycles endurance
  • 10-year data retention
  • Advanced ECC (Error Correction Code) support

Physical Packaging

The 48-TSOP package (48-TFSOP, 18.4mm width) features:

  • 0.5mm pin pitch
  • Surface-mount design
  • RoHS compliant construction
  • Industrial-grade shock and vibration resistance

Applications and Use Cases

Despite its obsolete status, the MT29F8G08ABABAWP-IT:B remains valuable for:

Industrial Systems

  • Factory automation controllers
  • PLC (Programmable Logic Controller) storage
  • Industrial PC firmware storage
  • Data logging devices

Embedded Systems

  • Medical equipment
  • Telecommunications infrastructure
  • Automotive electronics (non-safety critical)
  • Legacy consumer electronics

Data Storage Solutions

  • RAID controller cache
  • SSD (Solid State Drive) components
  • Backup and recovery systems

Technical Deep Dive: NAND Flash Technology

The MT29F8G08ABABAWP-IT:B utilizes Micron's 50nm NAND flash technology, offering:

Cell Structure

  • Floating-gate transistor design
  • Multi-level cell (MLC) architecture
  • 2 bits per cell storage
  • Advanced wear-leveling algorithms

Performance Characteristics

  • Page program time: 300 s (typical)
  • Block erase time: 2ms (typical)
  • Read access time: 25 s (first byte)
  • Sustained read throughput: 40MB/s

Why Choose Our MT29F8G08ABABAWP-IT:B Solutions?

As a trusted supplier of obsolete components, we offer:

Quality Assurance

  • 100% authentic Micron components
  • Rigorous testing and inspection
  • Lot code traceability
  • ESD-protected handling

Supply Chain Advantages

  • Large inventory of NOS (New Old Stock)
  • Competitive pricing for obsolete parts
  • Global shipping with customs support
  • Bulk order discounts available

Technical Support

  • Datasheet and application notes
  • Cross-reference assistance
  • Design-in support
  • Legacy system migration advice

Migration and Alternative Options

For customers considering upgrades, we recommend:

Direct Replacements

  • MT29F8G08ABACAWP - 8Gb with enhanced features
  • MT29F8G08ABDCAWP - Higher endurance version

Next-Generation Alternatives

  • Micron's 3D NAND solutions
  • TLC NAND flash options
  • Serial NAND alternatives

Conclusion

The MT29F8G08ABABAWP-IT:B remains a reliable choice for maintaining legacy systems requiring 8Gb NAND flash memory. While newer technologies offer improved performance, this component provides proven stability for applications where redesign isn't feasible. Our extensive inventory and technical expertise ensure you can continue operating your systems without interruption.

Contact our sales team today for pricing and availability of the MT29F8G08ABABAWP-IT:B or to discuss migration options for your specific application requirements.

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