MT29F8G08ABABAWP-IT:B - Micron's 8Gb NAND Flash Memory IC | Obsolete but Reliable
MT29F8G08ABABAWP-IT:B: Micron's High-Performance 8Gb NAND Flash Memory IC
The MT29F8G08ABABAWP-IT:B from Micron Technology Inc. represents a significant milestone in NAND flash memory technology. Although now classified as obsolete, this 8Gb parallel interface flash memory IC continues to be essential for maintaining and upgrading legacy systems across various industries.
In-Depth Technical Specifications
Memory Architecture and Performance
This IC features a 1G x 8 organization with 8Gb total capacity, utilizing Micron's advanced NAND flash technology. The parallel interface offers:
- Data transfer rates up to 40MB/s
- 16-bit I/O bus width
- Asynchronous operation mode
- Page size of 2KB+64Bytes
- Block size of 128KB+4KB
Robust Operating Characteristics
Engineered for reliability in demanding environments:
- Wide voltage range: 2.7V to 3.6V
- Extended temperature operation: -40 C to 85 C
- 100,000 program/erase cycles endurance
- 10-year data retention
- Advanced ECC (Error Correction Code) support
Physical Packaging
The 48-TSOP package (48-TFSOP, 18.4mm width) features:
- 0.5mm pin pitch
- Surface-mount design
- RoHS compliant construction
- Industrial-grade shock and vibration resistance
Applications and Use Cases
Despite its obsolete status, the MT29F8G08ABABAWP-IT:B remains valuable for:
Industrial Systems
- Factory automation controllers
- PLC (Programmable Logic Controller) storage
- Industrial PC firmware storage
- Data logging devices
Embedded Systems
- Medical equipment
- Telecommunications infrastructure
- Automotive electronics (non-safety critical)
- Legacy consumer electronics
Data Storage Solutions
- RAID controller cache
- SSD (Solid State Drive) components
- Backup and recovery systems
Technical Deep Dive: NAND Flash Technology
The MT29F8G08ABABAWP-IT:B utilizes Micron's 50nm NAND flash technology, offering:
Cell Structure
- Floating-gate transistor design
- Multi-level cell (MLC) architecture
- 2 bits per cell storage
- Advanced wear-leveling algorithms
Performance Characteristics
- Page program time: 300 s (typical)
- Block erase time: 2ms (typical)
- Read access time: 25 s (first byte)
- Sustained read throughput: 40MB/s
Why Choose Our MT29F8G08ABABAWP-IT:B Solutions?
As a trusted supplier of obsolete components, we offer:
Quality Assurance
- 100% authentic Micron components
- Rigorous testing and inspection
- Lot code traceability
- ESD-protected handling
Supply Chain Advantages
- Large inventory of NOS (New Old Stock)
- Competitive pricing for obsolete parts
- Global shipping with customs support
- Bulk order discounts available
Technical Support
- Datasheet and application notes
- Cross-reference assistance
- Design-in support
- Legacy system migration advice
Migration and Alternative Options
For customers considering upgrades, we recommend:
Direct Replacements
- MT29F8G08ABACAWP - 8Gb with enhanced features
- MT29F8G08ABDCAWP - Higher endurance version
Next-Generation Alternatives
- Micron's 3D NAND solutions
- TLC NAND flash options
- Serial NAND alternatives
Conclusion
The MT29F8G08ABABAWP-IT:B remains a reliable choice for maintaining legacy systems requiring 8Gb NAND flash memory. While newer technologies offer improved performance, this component provides proven stability for applications where redesign isn't feasible. Our extensive inventory and technical expertise ensure you can continue operating your systems without interruption.
Contact our sales team today for pricing and availability of the MT29F8G08ABABAWP-IT:B or to discuss migration options for your specific application requirements.