LL46-GS08 Schottky Diode: Ultimate 100V/150mA High-Speed Rectifier Solution

The LL46-GS08 Schottky diode from General Semiconductor stands as a pinnacle of efficiency in discrete semiconductor technology. Engineered for precision power management, this surface-mount diode delivers exceptional performance in compact SOD-80 MiniMELF packaging. With its industry-leading 100V reverse voltage rating and 150mA current capacity, the LL46-GS08 has become a go-to component for engineers worldwide.

In-Depth Technical Analysis

Unmatched Electrical Characteristics

Boasting a remarkably low forward voltage drop of just 1V at 250mA, the LL46-GS08 significantly outperforms conventional PN junction diodes. This characteristic translates to:

• Up to 30% lower power dissipation
• Enhanced system efficiency
• Reduced thermal management requirements

High-Speed Performance Metrics

The Schottky barrier construction enables:

• Near-zero reverse recovery time (trr)
• 10pF ultra-low capacitance @ 0V, 1MHz
• Ideal for switching frequencies up to 10MHz

Advanced Package Technology

The SOD-80 MiniMELF package offers:

• 3.5mm 1.6mm compact footprint
• Superior thermal performance with 125 C max junction temperature
• Automated assembly compatibility
• Enhanced mechanical robustness

Comprehensive Application Guide

Power Conversion Systems

The LL46-GS08 excels in:

• DC-DC buck/boost converters
• OR-ing diode in redundant power supplies
• Secondary-side rectification in flyback converters

Signal Processing

Critical for:

• RF signal detection
• High-speed logic level translation
• Sample-and-hold circuits

Protection Circuits

Provides robust:

• Reverse polarity protection
• Transient voltage suppression
• ESD protection up to 8kV

Comparative Advantage

When benchmarked against similar diodes, the LL46-GS08 offers:

Parameter	LL46-GS08	Competitor A	Competitor B
Vf @ 250mA	1.0V	1.2V	1.1V
Ir @ 75V	5 A	10 A	8 A
Package Size	3.5 1.6mm	4.0 2.0mm	3.8 1.8mm

Design Considerations

Thermal Management

For optimal performance:

• Maintain PCB copper pad area 4mm
• Use thermal vias for heat dissipation
• Limit continuous current to 120mA above 85 C

Layout Best Practices

Recommended guidelines:

• Minimize trace length to reduce parasitic inductance
• Place decoupling capacitors within 2mm
• Avoid sharp corners in high-speed signal paths

Industry-Leading Reliability

General Semiconductor's rigorous quality control ensures:

• MTBF > 1,000,000 hours
• 100% automated optical inspection
• Compliance with AEC-Q101 automotive standards

Purchasing Information

The LL46-GS08 is available through authorized distributors with:

• Standard tape-and-reel packaging (3,000 units/reel)
• MOQ of 100 pieces
• Lead time of 2-4 weeks

Frequently Asked Questions

Q: Can the LL46-GS08 handle surge currents?

A: Yes, it can withstand 500mA pulses for up to 100 s.

Q: Is this diode RoHS compliant?

A: Absolutely, the LL46-GS08 meets all RoHS 3.0 requirements.

Q: What's the typical reverse recovery time?

A: As a Schottky diode, it exhibits negligible reverse recovery (typically <1ns).

Conclusion

The LL46-GS08 represents the gold standard in Schottky diode technology, combining General Semiconductor's manufacturing expertise with cutting-edge semiconductor design. Its exceptional electrical characteristics, compact form factor, and proven reliability make it the perfect choice for demanding applications across telecommunications, industrial controls, automotive systems, and consumer electronics.

For design support, SPICE models, or volume pricing, contact our technical sales team today. We provide comprehensive resources including:

• Detailed application notes
• Reference designs
• Customized solution development