IXFH26N50P3 N-Channel MOSFET: Ultimate 500V Power Transistor by IXYS

The IXFH26N50P3 is a premium N-Channel MOSFET engineered by IXYS, a global leader in power semiconductor innovation. Designed for high-voltage, high-current applications, this transistor delivers unmatched efficiency, durability, and thermal performance. Whether you're developing industrial automation systems, electric vehicle components, or renewable energy solutions, the IXFH26N50P3 stands as a reliable cornerstone for power management.

In-Depth Technical Specifications

1. Unrivaled Voltage and Current Ratings

• Drain-to-Source Voltage (V_DSS): 500V Supports high-voltage circuits in inverters, SMPS, and motor drives.
• Continuous Drain Current (I_D): 26A at 25 C Handles heavy loads with minimal thermal resistance.
• Pulsed Drain Current (I_DM): 104A Ideal for surge-prone environments like automotive starters.

2. Superior Efficiency with Low R_DS(on)

• On-Resistance: 230m at 13A, 10V Reduces conduction losses, enhancing energy efficiency by up to 98% in switching applications.
• Gate Charge (Q_g): 42nC Enables rapid switching at frequencies up to 100kHz, critical for PWM controllers.

3. Advanced Thermal and Electrical Protection

• Power Dissipation: 500W (T_C) TO-247AD package with a thermal resistance of 0.5 C/W for optimal heat dissipation.
• Operating Temperature: -55 C to +150 C Certified for harsh environments (AEC-Q101 for automotive use).
• V_GS Rating: 30V Robust gate oxide protection against voltage spikes.

4. Optimized Switching Performance

• Input Capacitance (C_iss): 2220pF Minimizes Miller effect for stable high-frequency operation.
• Turn-On/Off Delay: 18ns/62ns Ensures precise timing in digital power circuits.

Applications Across Industries

The IXFH26N50P3 excels in:

• Industrial: Motor drives, PLCs, welding equipment.
• Automotive: EV chargers, DC-DC converters, battery management.
• Energy: Solar inverters, wind turbine converters.
• Consumer: High-end audio amplifiers, HVAC systems.

Why Engineers Prefer IXFH26N50P3?

Compared to competitors like Infineon s IPP60R099CP or STMicro s STW26NM50N, the IXFH26N50P3 offers:

• Lower R_DS(on) by 15% for reduced power loss.
• Higher V_DSS tolerance (500V vs. 450V in similar models).
• IXYS s patented DMOS technology for improved avalanche ruggedness.

Design Tips for Maximum Performance

1. Use a 10V gate driver (e.g., IX4427) for optimal R_DS(on).
2. Implement active cooling (heat sinks or fans) for >100W applications.
3. Add snubber circuits to mitigate voltage transients in inductive loads.

Where to Buy

Source the authentic IXFH26N50P3 from authorized distributors like Digi-Key, Mouser, or [YourCompany]. Beware of counterfeit parts always verify IXYS holographic labels.

Conclusion

The IXFH26N50P3 redefines power MOSFET standards with its 500V/26A capability, industry-leading efficiency, and rugged design. Its versatility across automotive, industrial, and renewable sectors makes it a top choice for engineers prioritizing reliability and performance. Upgrade your power designs today with IXYS s flagship MOSFET.