IRF7504TRPBF MOSFET: The Ultimate Dual P-Channel Power Solution for Modern Electronics

The IRF7504TRPBF from Infineon Technologies represents a benchmark in dual P-channel MOSFET technology, offering engineers a perfect balance of performance, efficiency, and compact design. Despite its obsolete status, this component remains highly relevant for both legacy systems and new designs requiring reliable power switching capabilities.

Comprehensive Product Analysis

Manufacturer & Product Line

• Manufacturer: Infineon Technologies (Global semiconductor leader)
• Product Series: HEXFET Power MOSFET Family
• Package Technology: Advanced Micro8 packaging

Detailed Technical Specifications

Enhanced Electrical Characteristics

Parameter	Value	Advantage
Drain-Source Voltage (VDSS)	20V	Ideal for 12V-18V systems
Continuous Drain Current (ID)	1.7A @ 25 C	Handles moderate power loads
RDS(on) (max)	270m @ 1.2A, 4.5V	Superior conduction efficiency
Gate Threshold Voltage (VGS(th))	700mV @ 250 A	Logic-level compatibility
Total Gate Charge (Qg)	8.2nC @ 4.5V	Fast switching capability
Input Capacitance (Ciss)	240pF @ 15V	Reduced drive requirements

Advanced Thermal Performance

• Power Dissipation: 1.25W (TA = 25 C)
• Junction Temperature Range: -55 C to +150 C
• Thermal Resistance: 100 C/W (Junction-to-Ambient)

Package Information

The IRF7504TRPBF utilizes Infineon's proprietary Micro8 package (3x3mm footprint), offering:

• Space-saving 8-pin TSSOP/MSOP configuration
• Improved thermal performance over standard SOIC
• Compatible with automated SMT assembly processes
• Moisture Sensitivity Level (MSL): 1 (Unlimited floor life)

Application Spotlight

Power Management Systems

Excellent for:

• DC-DC converter synchronous rectification
• Load switch circuits in portable devices
• Power distribution in multi-voltage systems

Motor Control Solutions

Ideal characteristics for:

• Brushed DC motor H-bridge circuits
• Stepper motor drive systems
• Small servo motor control

Battery Protection Circuits

Key features benefit:

• Reverse polarity protection
• Load disconnect switches
• Battery management system (BMS) applications

Design Considerations

Gate Drive Recommendations

For optimal performance:

• Use 4.5V-10V gate drive voltage
• Implement proper gate resistance (2.2 -10 typical)
• Consider Miller plateau effects during switching

PCB Layout Guidelines

• Maximize copper area for heat dissipation
• Keep gate drive traces short and direct
• Use thermal vias for improved heat transfer

Why Engineers Choose IRF7504TRPBF

This MOSFET continues to be specified for:

• Proven reliability in field applications
• Cost-effective alternative to newer parts
• Simplified dual-MOSFET design integration
• Excellent availability through distribution channels

Obsolete Part Strategy

While marked obsolete, we recommend:

• Evaluating last-time-buy quantities
• Considering pin-compatible alternatives
• Exploring our recommended migration paths

Technical Support & Purchasing

Our team provides:

• Comprehensive datasheet analysis
• Application-specific design support
• Reliable sourcing for obsolete components
• Volume pricing for production quantities

For current pricing, lead times, or technical questions about the IRF7504TRPBF, contact our technical sales team today. We're committed to supporting your power electronics design needs with genuine Infineon components and expert application guidance.