EPC2014C: The Ultimate GaN FET for Next-Gen Power Electronics Solutions

The EPC2014C represents a breakthrough in power semiconductor technology, combining the superior performance of Gallium Nitride (GaN) with innovative design from Efficient Power Conversion (EPC). This N-Channel enhancement-mode GaN field-effect transistor (FET) delivers unprecedented efficiency and speed, making it the perfect choice for engineers designing advanced power conversion systems.

Why GaN Technology Outperforms Silicon

Gallium Nitride semiconductors have revolutionized power electronics by offering:

• 10x higher electron mobility than silicon
• Lower conduction losses
• Faster switching capabilities
• Better thermal performance
• Smaller form factors

The EPC2014C leverages these advantages to deliver superior performance in demanding applications.

Detailed Technical Specifications

Electrical Characteristics

Parameter	Value
Drain-Source Voltage (Vdss)	40V
Continuous Drain Current (Id)	10A @ 25 C
Pulsed Drain Current	40A
On-Resistance (Rds(on))	16m @ 10A, 5V
Gate Threshold Voltage	2.5V max @ 2mA
Total Gate Charge (Qg)	2.5nC @ 5V
Input Capacitance (Ciss)	300pF @ 20V

Thermal and Mechanical Properties

• Operating Junction Temperature: -40 C to +150 C
• Storage Temperature: -55 C to +150 C
• Thermal Resistance: 15 C/W (junction-to-case)
• Package Type: Bare die with 5-solder bar configuration
• Dimensions: 1.95mm 1.95mm 0.23mm

Key Advantages Over Silicon MOSFETs

The EPC2014C offers several critical improvements:

1. Unmatched Switching Performance

With switching speeds up to 10x faster than comparable silicon MOSFETs, the EPC2014C enables:

• Higher frequency operation (up to 10MHz)
• Reduced switching losses
• Smaller passive components
• Higher power density designs

2. Superior Efficiency

The combination of low Rds(on) and fast switching results in:

• Up to 5% higher efficiency in DC-DC converters
• Reduced thermal management requirements
• Longer battery life in portable applications

3. Robust Thermal Performance

The GaN material properties and innovative packaging provide:

• Better heat dissipation
• Higher temperature operation
• Improved reliability

Application-Specific Benefits

DC-DC Power Conversion

Ideal for:

• High-frequency buck/boost converters
• Point-of-load regulators
• Voltage regulator modules (VRMs)
• 48V to 12V automotive conversion

Wireless Power Systems

Enables:

• Higher efficiency wireless charging
• Smaller transmitter/receiver coils
• Faster charging times

Class D Audio Amplifiers

Delivers:

• Lower distortion
• Higher output power
• Smaller form factors

Motor Drive Applications

Perfect for:

• Brushless DC motor control
• Robotic systems
• Drone propulsion systems

Design Considerations

Gate Drive Requirements

For optimal performance:

• Use 5V gate drive voltage
• Implement proper gate resistance (typically 2-10 )
• Ensure clean, low-inductance gate drive circuit

Layout Recommendations

• Minimize loop inductance in power paths
• Use proper thermal vias for heat dissipation
• Implement tight gate drive routing

Comparison with Competing Devices

Parameter	EPC2014C	Silicon MOSFET Equivalent
Rds(on)	16m	25m
Qg	2.5nC	15nC
Switching Speed	5ns	50ns
Efficiency @ 1MHz	95%	88%

Purchasing Information

Available through authorized distributors worldwide. Contact our sales team for:

• Volume pricing
• Evaluation boards
• Technical support
• Custom solutions

For engineers looking to push the boundaries of power electronics, the EPC2014C GaN FET delivers unmatched performance in a compact, efficient package. Experience the GaN advantage in your next design!