BC847B-13-F NPN Transistor: High-Performance, 45V, 100mA, SOT-23-3 Package by Diodes Incorporated

The BC847B-13-F from Diodes Incorporated is a premium NPN bipolar junction transistor (BJT) designed for engineers and electronics enthusiasts who demand reliability and performance. This surface-mount transistor in the compact SOT-23-3 package delivers exceptional characteristics for amplification, switching, and high-frequency applications. Whether you're working on consumer electronics, industrial automation, or communication systems, the BC847B-13-F offers the perfect balance of power and precision.

In-Depth Technical Specifications

1. Transistor Type and Configuration

The BC847B-13-F is an NPN transistor, meaning it uses electrons as the primary charge carriers. This configuration makes it ideal for applications where current flows from the collector to emitter when a small base current is applied. Its design ensures efficient operation in both switching and amplification circuits.

2. Voltage and Current Ratings

With a collector-emitter breakdown voltage (Vceo) of 45V and a collector current (Ic) rating of 100mA, this transistor handles moderate power loads with ease. The saturation voltage (Vce sat) is just 600mV at 100mA, ensuring minimal power loss and high efficiency in switching applications.

3. Gain and Frequency Performance

The BC847B-13-F features an impressive DC current gain (hFE) of 450 (minimum) at 2mA, making it excellent for signal amplification. Its transition frequency (fT) of 300MHz allows it to perform reliably in RF and high-speed switching circuits, including wireless communication modules.

4. Leakage and Power Dissipation

With an ultra-low collector cutoff current (Iceo) of 15nA, this transistor minimizes unwanted leakage, enhancing circuit stability. The maximum power dissipation of 310mW ensures safe operation even in compact designs with limited thermal management.

5. Temperature Range and Package

Engineered for versatility, the BC847B-13-F operates across a wide temperature range (-65 C to +150 C), making it suitable for harsh environments. The SOT-23-3 surface-mount package saves PCB space while simplifying automated assembly processes.

Applications of the BC847B-13-F

This transistor is widely used in:

• Audio Amplifiers Boosts weak signals in portable devices and audio systems.
• Digital Logic Circuits Interfaces between different voltage levels (e.g., 3.3V to 5V).
• RF Modules Supports high-frequency signal processing in wireless communication.
• LED Drivers Efficiently controls LED brightness in display and lighting systems.
• Automotive Electronics Reliable performance in sensors and control modules.

Why Choose the BC847B-13-F?

Diodes Incorporated is a trusted name in semiconductor manufacturing, ensuring high-quality and consistent performance. The BC847B-13-F stands out due to its:

• High Gain and Low Noise Ideal for precision amplification.
• Compact SMT Design Perfect for space-constrained PCBs.
• Wide Operating Temperature Suitable for industrial and automotive use.
• Cost-Effective Solution Delivers premium performance at a competitive price.

Where to Buy

Looking for the BC847B-13-F NPN transistor? Purchase directly from authorized distributors or visit Diodes Incorporated s official website for datasheets and bulk pricing. Ensure authenticity by sourcing from trusted suppliers.

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